Robert Bosch investment capital GmbH (RBVC), the venture capital supply of this Bosch Group, has actually finished a good investment in Dresden (Germany) based Ferroelectric Memory GmbH (FMC) in a USD 20 million show B money round. FMC is establishing a completely new ultra-low-power and powerful memory technology for embedded and stand-alone memory. Traditional Complementary Metal Oxide Semiconductor (CMOS) process compatibility allows best ease-of-integration into current production procedures. The Series B investment round is led by M Ventures, the organization venture supply of Merck, and imec.xpand along with RBVC, SK Hynix and TEL Ventures. “Embedded AI applications for automotive and industry 4.0 usage cases need huge memory for huge amounts of information is processed” says controlling Director Dr. Ingo Ramesohl. “With near-zero power consumption and fast accessibility rate, FMC’s technology has actually unrivaled prospective to boost inference and education on side.”
Accelerated use of promising Non-Volatile Memory
Present memory technologies are dealing with restrictions to their continued improvement as the dependence on greater density, reduced latency, and lower energy consumption will be the major elements which are propelling the adoption of emerging non-volatile memory (NVM). Researching the market Firm Yole wants the market for appearing NVM to grow fast and reach USD 6.2bn by 2025. Especially with AI moving constantly into the side, energy consumption becomes a decisive criteria. “The increase of AI, Web of Things (IoT), Big Data, and 5G demands advanced level next-generation thoughts that permit high-speed and ultra-low power usage, while being appropriate for leading-edge CMOS reasoning processes ensuring reduced manufacturing expenses,” said Ali Pourkeramati, CEO of FMC.
The organization has already made significant progress into the development of its non-volatile memory technology promising to provide exceptional overall performance in contrast to advanced and promising memory solutions. It is at this time working closely with significant semiconductor organizations, and with foundries in the US, Europe, and Asia. The investment will accelerate the commercialization of FMC’s ferroelectric field-effect transistor (FeFET) and capacitor (FeCAP) technology into exponentially increasing markets like AI, IoT and information centers.
Transforming standard transistors and capacitors into non-volatile memory
FMC’s patented technology helps it be simple to transform hafnium-oxide (HfO2) into a ferroelectric memory cell. In other words, every standard CMOS transistor and capacitor are changed into a NVM mobile – a FeFET or FeCAP. FMC’s memory technology makes use of the ferroelectric properties of crystalline HfO2. HfO2 with its amorphous type is already the gate isolator material of each and every CMOS transistor from planar to FinFET. Besides its high speed, ultra-low power, CMOS reasoning compatibility, paid down production price, and severe temperature stability, FMC’s FeFET technology provides full magnetic resistance and high radiation resistance. FeFETs and FeCAPs may be integrated into CMOS manufacturing lines using existing equipment without the need for additional capital expenses.
Top notch team and people
The management team has extensive experience with the semiconductor and memory business and it is thought to be one of several leading teams in ferroelectric storage. The brand new collection of people led by M Ventures and imec.xpand, accompanied by RBVC, SK Hynix, TEL Ventures and current trader eCapital, aims to support FMC through the entire whole semiconductor value-chain and allow the organization to carry its higher level ferroelectric memory technology towards market.
PROVIDER: Robert Bosch